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2SK1947
Silicon N Channel MOS FET
REJ03G0986-0200 (Previous: ADE-208-1334) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 140 ns) Suitable for switching regulator, motor control
Outline
RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL)
D G 1. Gate 2. Drain (Flange) 3. Source S 2 3
1
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1947
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Tc = 25C Symbol VDSS VGSS ID ID(pulse)* IDR Pch* Tch
2 1
Ratings 250 30 50 200 50 200 150 -55 to +150
Unit V V A A A W
Tstg
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 30 -- -- 2.0 -- 20 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.047 30 5810 2360 270 75 270 420 200 1.2 140 Max -- -- 10 250 3.0 0.06 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 25 A, VGS = 10 V* ID = 25 A, VDS = 10 V* VDS = 10 V, VGS = 0, f = 1 MHz ID = 25 A, VGS = 10 V, RL = 1.2
3
3
IF = 50 A, VGS = 0 IF = 50 A, VGS = 0, diF/dt = 100 A/s
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1947
Main Characteristics
Power vs. Temperature Derating
300 1000 300
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
100 30 10
200
100
3 by R DS (on) 1 0.3 0.1
1m Op = s era 10 ms tio n( (1 T s Operation in this c = 25 hot) area is limited C)
DC
PW
10
10 s 0 s
Ta = 25C 1 3 10 30 100 300 1000
0
50
100
150
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
100 10 V 8V 80 60 40 20 6V 50 40 30 20 10
Typical Transfer Characteristics
Drain Current ID (A)
5.5 V 5V 4V VGS = 3.5 V 4 8 12 16 20
Drain Current ID (A)
VDS = 10 V Pulse Test
Tc = 25C 75C -25C
0
0
2
4
6
8
10
Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
0.5 Pulse Test 0.2 0.1 0.05 0.02 0.01 VGS = 10 V
Drain to Source Saturation Voltage VDS (on) (V)
5 Pulse Test 4 3 50 A 2 1 20 A I D = 10 A
0
4
8
12
16
20
Static Drain to Source on State Resistance RDS (on) ()
0.005 2 5 10 20 50 100 200
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1947
Static Drain to Source on State Resistance vs. Temperature
0.20 0.16 0.12 I D = 50 A 0.08 10 A, 20 A 0.04 0 -40 Pulse Test VGS = 10 V
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
100 50 20 -25C 10 5 2 1 0.5 75C Pulse Test V DS = 10 V Tc = 25C
0
40
80
120
160
1
2
5
10
20
50
Case Temperature TC (C) Body to Drain Diode Reverse Recovery Time
500 10000 di/dt = 100 A/s V GS = 0, Ta = 25C
Drain Current ID (A) Typical Capacitance vs. Drain to Source Voltage
Ciss
Reverse Recovery Time trr (ns)
Capacitance C (pF)
200 100 50 20 10 5 1
1000
Coss
100 VGS = 0 f = 1 MHz 10
Crss
2
5
10
20
50
100
0
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V)
500 400 300 VDS 200 100 VDD = 200 V 100 V 50 V 80 160 240 320 8 4 0 400 VDD = 200 V 100 V 50 V VGS 16 12 20 1000
Switching Characteristics
Switching Time t (ns)
500 200 100 50 20 tf
td(off)
tr
ID = 50 A
td(on)
VGS = 10 V, VDD = 30 V PW = 2 s, duty 1 %
0
10 0.5
1
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1947
Reverse Drain Current vs. Source to Drain Voltage
50
Reverse Drain Current IDR (A)
Pulse Test 40 30 20 10
VGS = 10 V 0, -5 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 D=1 0.5 0.3 0.2
0.1
1
TC = 25C
0.1
0.05
0.02 0.01
1 Sh o lse t Pu
ch-c (t) = S (t) * ch-c ch-c = 0.625C/W, TC = 25C PDM PW D = PW T
0.03
T 1m 10 m 100 m
0.01 10
100
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor Vout Monitor D.U.T. RL Vin 10 V 50 . VDD = 30 V . td (on) Vin Vout 10% 10%
Waveforms
90%
10% 90% td (off)
90% tr
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK1947
Package Dimensions
JEITA Package Code
RENESAS Code
PRSS0004ZF-A
Package Name TO-3PL / TO-3PLV
MASS[Typ.] 9.9g
Unit: mm
6.0 0.2
20.0 0.3 3.3 0.2
5.0 0.2
26.0 0.3
20.0 0.6 2.5 0.3
1.4 3.0 2.2 1.2 +0.25 -0.1 5.45 0.5 1.0 0.6 +0.25 -0.1 2.8 0.2
5.45 0.5
3.8 7.4
Ordering Information
Part Name 2SK1947-E 500 pcs Quantity Box (Case) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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